VVZ 24Three Phase Half ControlledRectifier Bridge
VRSM VDSM
V 1300 1700
VRRMVDRMV12001600
VVZ 24-12io1VVZ 24-16io1
574
163IdAVM=27 A
VRRM=1200/1600 V
4
Type
2
1
2
3
5
6
7
8
8
SymbolIdAVIdAVM
IFRMS, ITRMSIFSM, ITSM
ConditionsTK = 100°C; modulemoduleper legTVJ = 45°C;VR = 0TVJ = TVJMVR = 0
t = 10 ms(50 Hz), sinet = 8.3 ms(60 Hz), sinet = 10 ms(50 Hz), sinet = 8.3 ms(60 Hz), sinet = 10 ms(50 Hz), sinet = 8.3 ms(60 Hz), sinet = 10 ms(50 Hz), sinet = 8.3 ms(60 Hz), sine
Maximum Ratings
212716300320270290450430365350150
AAAAAAAAsA2s
2
Features
zzzzz
Package with DCB ceramic base plateIsolation voltage 3600 V~Planar passivated chipsSoldering terminalsUL registered E 72873
Applications
z
It
2
TVJ = 45°CVR = 0TVJ = TVJMVR = 0
zz
AsA2s
2
Input rectifier for switch mode powersupplies (SMPS)
Softstart capacitor chargingElectric drives and auxiliaries
(di/dt)cr
TVJ = TVJMrepetitive, IT = 50 Af =400 Hz, tP =200 μsVD = 2/3 VDRMIG = 0.3 A,non repetitive, IT = 1/3 • IdAVdiG/dt = 0.3 A/μs
TVJ = TVJM; VDR = 2/3 VDRM
RGK = ∞; method 1 (linear voltage rise)
A/μs
Advantages
zzz
500100010
A/μsV/μsVWWWW°C°C°CV~V~Nmlb.in.
g
Easy to mount with two screwsSpace and weight savings
Improved temperature and powercycling
(dv/dt)crVRGMPGMPGAVMTVJTVJMTstgVISOLMdWeight
TVJ = TVJMIT = ITAVM
tp=30μstp =500μstp=10ms
≤≤≤
10510.5
-40...+125
125-40...+125
50/60 Hz, RMSIISOL ≤ 1 mAMounting torquetyp.
t = 1 mint = 1 s(M5)
(10-32 UNF)
300036002-2.518-2228
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
20110113d
© 2011 IXYS All rights reserved
1 - 3
VVZ 24SymbolIR, IDVF, VTVT0rTVGTIGT
ConditionsVR = VRRM; VD = VDRMIF, IT = 30 A, TVJ = 25°C
For power-loss calculations only(TVJ = 125°C)VD = 6 V;VD = 6 V;
TVJ = 25°CTVJ = -40°CTVJ = 25°CTVJ = -40°CTVJ = 125°CVD = 2/3 VDRMVD = 2/3 VDRMTVJ = 25°CTVJ = -40°CTVJ = 125°C
≤≤≤≤≤≤≤≤≤≤≤≤
TVJ = TVJMTVJ = 25°C
Characteristic Values
≤≤≤
50.31.45
mAmAV
1V16mΩ1.01.26580500.251502001001002
VVmAmAmAVmAmAmAmAmAμsμsμCK/WK/WK/WK/W
VGDIGDIL
TVJ = TVJM;TVJ = TVJM;
IG = 0.3 A; tG = 30 μsdiG/dt = 0.3 A/μs
IHtgdtqQrRthJCRthJHdSdAa
TVJ = 25°C; VD = 6 V; RGK = ∞TVJ = 25°C; VD = 1/2 VDRMIG = 0.3 A; diG/dt = 0.3 A/μs
TVJ = 125°C; IT = 15 A, tp = 300 μs, -di/dt = 10 A/μsVR = 100 V, dv/dt = 20 V/μs, VD = 2/3 VDRMper thyristor (diode); DC currentper module
per thyristor (diode); DC currentper module
Creeping distance on surfaceCreepage distance in airMax. allowable acceleration
typ.150
75
2.10.352.70.45
7mm7mm50m/s2
Dimensions in mm (1 mm = 0.0394\")
IXYS reserves the right to change limits, test conditions and dimensions.
20110113d
© 2011 IXYS All rights reserved
2 - 3
VVZ 2410VVG
1:IGT,2:IGT,3:IGT,TVJ=125°CTVJ=25°CTVJ=-40°C1
12354:PGAV=0.5WIGD,TVJ=125°C5:PGM=1W6:PGM=10W0.1
110100
1000IG
mA
Fig. 1Surge overload current per chip
IFSM: Crest value, t: duration
Fig. 2I2t versus time (1-10 ms)
per chipFig. 3Gate trigger characteristics
Triggering
Fig. 4Power dissipation versus direct output current and ambient temperature
3ZthJKK/WZthJK2Constants for ZthJK calculation
1i123
10-210-1100101 st102Rthi (K/W)0.171.41.1
ti (s)0.0280.442.6
010-3Fig. 5Transient thermal impedance junction to heatsinkIXYS reserves the right to change limits, test conditions and dimensions.
20110113d
© 2011 IXYS All rights reserved
3 - 3