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专利名称：Nitride semiconductor laser发明人：Shigetaka Tomiya,Tomonori Hino申请号：US10343878申请日：20020604公开号：US061268B2公开日：20050510
专利附图：
摘要：The present invention is a nitride compound semiconductor laser, in which acleaved end face is flat, and a breakdown of a laser end face induced during an operationcan be suppressed, which consequently enables a life to be prolonged. In the nitridecompound semiconductor laser, a stress concentration suppression layer is formed
between an active layer and a cap layer.
申请人：Shigetaka Tomiya,Tomonori Hino
地址：Tokyo JP,Kanagawa JP
国籍：JP,JP
代理机构：Sonnenschein, Nath & Rosenthal LLP
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