专利内容由知识产权出版社提供
专利名称：NITRIDE SEMICONDUCTOR LASER AND
METHOD FOR FABRICATING THE SAME
发明人：Gaku SUGAHARA,Yasutoshi
KAWAGUCHI,Akihiko ISHIBASHI,IsaoKIDOGUCHI,Toshiya YOKOGAWA
申请号：US11872071申请日：20071015
公开号：US20080049806A1公开日：20080228
专利附图：
摘要：A semiconductor laser includes a nitride semiconductor substrate with a striped
raised portion that extends in a resonant cavity length direction, a masking layer, whichhas been defined on the principal surface of the nitride semiconductor substrate andwhich has a striped opening in a selected area on the upper surface of the striped raisedportion, and a nitride semiconductor multilayer structure, which has been grown on theselected area on the upper surface of the striped raised portion. The nitride
semiconductor multilayer structure is thicker than nitride semiconductors on the maskinglayer, and the nitride semiconductor multilayer structure is broader in width than thestriped opening of the masking layer and includes portions that have grown laterallyonto the masking layer.
申请人：Gaku SUGAHARA,Yasutoshi KAWAGUCHI,Akihiko ISHIBASHI,IsaoKIDOGUCHI,Toshiya YOKOGAWA
地址：Nara-shi JP,Suita-shi JP,Mishima-gun JP,Kawanishi-shi JP,Nara-shi JP
国籍：JP,JP,JP,JP,JP
更多信息请下载全文后查看