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专利名称：Nitride semiconductor laser device including
growth-inhibiting film at dislocationconcentrated region
发明人：Shigetoshi Ito,Takayuki Yuasa,Yoshihiro
Ueta,Mototaka Taneya,Zenpei Tani,KensakuMotoki
申请号：US12836211申请日：20100714公开号：US08334544B2公开日：20121218
专利附图：
摘要：A nitride semiconductor laser device with a reduction in internal crystal defectsand an alleviation in stress, and a semiconductor optical apparatus comprising this nitridesemiconductor laser device. First, a growth suppressing film against GaN crystal growth isformed on the surface of an n-type GaN substrate equipped with alternate stripes ofdislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-typeGaN substrate coated with the growth suppressing film is overlaid with a nitridesemiconductor layer by the epitaxial growth of GaN crystals. Further, the growthsuppressing film is removed to adjust the lateral distance between a laser waveguideregion and the closest dislocation concentrated region to 40 μm or more.
申请人：Shigetoshi Ito,Takayuki Yuasa,Yoshihiro Ueta,Mototaka Taneya,ZenpeiTani,Kensaku Motoki
地址：Ikoma JP,Ikoma-Gun JP,Yamatokoriyama JP,Nara JP,Tondabayashi JP,Minoo JP
国籍：JP,JP,JP,JP,JP,JP
代理机构：Morrison & Foerster LLP
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