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专利名称：Nitride semiconductor laser device and
nitride semiconductor device
发明人：Yuji Matsuyama,Shinji Suzuki,Kousuke
Ise,Atsuo Michiue,Akinori Yoneda
申请号：US10907398申请日：20050331公开号：US07408199B2公开日：20080805
专利附图：
摘要：A nitride semiconductor laser device comprises, on a principle face of a nitridesemiconductor substrate: a nitride semiconductor layer having a first conductivity type; an
active layer comprising indium, and a nitride semiconductor layer having a secondconductivity type that is different from said first conductivity type, and on the surface ofwhich is formed a stripe ridge; said principal face of said nitride semiconductor substratehaving an off angle a (θ) with respect to a reference crystal plane, in at least a directionsubstantially parallel to said stripe ridge.
申请人：Yuji Matsuyama,Shinji Suzuki,Kousuke Ise,Atsuo Michiue,Akinori Yoneda
地址：Anan JP,Anan JP,Anan JP,Anan JP,Anan JP
国籍：JP,JP,JP,JP,JP
代理机构：Global IP Counselors, LLP
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