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专利名称：Nitride semiconductor laser devices发明人：佐藤 恒輔,岩谷 素顕,川瀬 雄太申请号：JP2018097932申请日：20180522公开号：JP2019204847A公开日：20191128
专利附图：
摘要：Problem to be solved: to provide a nitride semiconductor laser device capableof high output. Nitride semiconductor laser device 1 includesLower guide layer 122aformed of alx 1gA (1 - x) nA light emitting layer 121 having a well layer 121a formed ofal2ga (1-x2) nA nitride semiconductor laminate film 12 comprising a composition change
layer 123, in which al composition of alx 3Ga (1-x3) n is continuously or stepwise reducedaway from the upper guide layer 122b and upper guide layer 122b formed by alx 1gA (1 -x) n, is provided;The X3 minimum value ofMaximum value ZThe thickness of the lowerguide layer 122a isThe thickness of the light emitting layer 121 is T2The thickness of theupper guide layer 122b isThe nitride semiconductor laminated film 12 isIt has a
composition satisfying the relationship of x2 < X1 < y and - 1 < x1-yIt has a film thicknessthat satisfies the relationship of 40 nm < T1 + T2 + T3 < 600 nm.Diagram
申请人：旭化成株式会社,学校法人 名城大学
地址：東京都千代田区有楽町一丁目１番２号,愛知県名古屋市天白区塩釜口１－５０１
国籍：JP,JP
代理人：森 哲也,田中 秀▲てつ▼
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