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专利名称：Nitride Semiconductor Laser and Method
for Fabricating Same
发明人：Susumu Ohmi,Takeshi Kamikawa申请号：US11922137申请日：20060412
公开号：US20090323746A1公开日：20091231
专利附图：
摘要：In one embodiment of the present invention, in a method of fabricating a nitridesemiconductor laser device, after an insulating film is formed on a layered nitride
semiconductor portion on a substrate, a resist mask is formed on the insulating film, such
that the insulating film is exposed near a position where an exit-side cleaved facet and areflection-side cleaved facet are formed. The insulating film near a position where theexit-side cleaved facet and the reflection-side cleaved facet are formed is then removed,and, after the resist mask is removed, cleavage is performed. As a result, even if thesubstrate and the layered nitride semiconductor portion are cleaved at a position wherethe exit-side cleaved facet and the reflection-side cleaved facet are formed, the insulatingfilm is not broken. This helps prevent fragments produced from the insulating film frombeing adhered to the exit-side cleaved facet and to the reflection-side cleaved facet.
申请人：Susumu Ohmi,Takeshi Kamikawa
地址：Hiroshima JP,Hiroshima JP
国籍：JP,JP
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