专利内容由知识产权出版社提供
专利名称：FIELD EFFECT TRANSISTOR AND METHOD
OF MANUFACTURING THE SAME
发明人：Tatsuo Shimizu,Atsuhiro Kinoshita,Hirotaka
Nishino
申请号：US13042590申请日：20110308
公开号：US20110254062A1公开日：20111020
专利附图：
摘要：A field effect transistor which can operate at a low threshold value includes: ann-type semiconductor region; a source region and a drain region separately formed in then-type semiconductor region; a first insulating film formed in the semiconductor regionbetween the source region and the drain region and containing silicon and oxygen; asecond insulating film formed on the first insulating film and containing at least onematerial selected from Hf, Zr, and Ti and oxygen; and a gate electrode formed on thesecond insulating film. Ge is doped in an interface region including an interface betweenthe first insulating film and the second insulating film, and an area density of the Ge has a
peak on a first insulating film side in the interface region.
申请人：Tatsuo Shimizu,Atsuhiro Kinoshita,Hirotaka Nishino
地址：Tokyo JP,Kanagawa-Ken JP,Kanagawa-Ken JP
国籍：JP,JP,JP
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