专利内容由知识产权出版社提供
专利名称：FIELD-EFFECT TRANSISTOR AND
MANUFACTURING METHOD THEREOF
发明人：Hokyun Ahn,Jong-Won Lim,Hyung Sup
Yoon,Byoung-Gue Min,Sang-Heung Lee,HaeCheon Kim,Eun Soo Nam
申请号：US13307069申请日：20111130
公开号：US20120153361A1公开日：20120621
专利附图：
摘要：Disclosed are a field-effect transistor and a manufacturing method thereof. The
disclosed field-effect transistor includes: a semiconductor substrate; a source ohmicmetal layer formed on one side of the semiconductor substrate; a drain ohmic metallayer formed on another side of the semiconductor substrate; a gate electrode formedbetween the source ohmic metal layer and the drain ohmic metal layer, on an upperportion of the semiconductor substrate; an insulating film formed on the semiconductorsubstrate's upper portion including the source ohmic metal layer, the drain ohmic metallayer and the gate electrode; and a plurality of field electrodes formed on an upperportion of the insulating film, wherein the insulating film below the respective fieldelectrodes has different thicknesses.
申请人：Hokyun Ahn,Jong-Won Lim,Hyung Sup Yoon,Byoung-Gue Min,Sang-HeungLee,Hae Cheon Kim,Eun Soo Nam
地址：Daejeon KR,Daejeon KR,Daejeon KR,Daejeon KR,Daejeon KR,Daejeon KR,DaejeonKR
国籍：KR,KR,KR,KR,KR,KR,KR
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