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专利名称：HEAT RADIATOR AND MANUFACTURING
METHOD THEREOF
发明人：Yoshitaka Iwata,Shogo Mori,Tomoya
Hirano,Kazuhiko Minami
申请号：US13443152申请日：20120410
公开号：US20120262883A1公开日：20121018
专利附图：
摘要：A back metal layer () has a plurality of stress relaxation spaces (). Each stressrelaxation space () is formed to open at least at one of the front surface and the back
surface of the back metal layer (). A region in the back metal layer () that is directly belowa semiconductor device () is defined as a directly-below region (A), and a region outsidethe directly-below region (A) that corresponds to and has the same dimensions as thedirectly-below region (A) is defined as a comparison region (A). The volume of the stressrelaxation spaces () in the range of the directly-below region (A) is less than the volumeof the stress relaxation spaces () formed in the range of the comparison region (A).
申请人：Yoshitaka Iwata,Shogo Mori,Tomoya Hirano,Kazuhiko Minami
地址：Kariya-shi JP,Kariya-shi JP,Oyama-shi JP,Oyama-shi JP
国籍：JP,JP,JP,JP
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