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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1114
DESCRIPTION
·With TO-3 package ·High voltage
·Wide area of safe operation
APPLICATIONS
·For power amplifier applications
PINNING (See Fig.2)
PIN DESCRIPTION 1
Base
2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER VCBO VCEO VEBO IC PC
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation
Open emitter Open base Open collector TC=25℃
CONDITIONS
VALUE UNIT 325 300 7 4
V V V A
100 W 150 ℃
Tj Junction temperature Tstg Storage temperature
-65~150 ℃
元器件交易网www.cecb2b.com
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage
2SC1114
CONDITIONS MIN TYP. MAXUNIT
IC=10mA ; IB=0 300 V
V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 325 V V(BR)EBO VCEsat VBEsat ICBO IEBO hFE
Emitter-base breakdown voltage Collector-emitter saturation voltageBase-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain
IE=1mA; IC=0 7 V
IC=2A ;IB=0.4A 0.8 V
IC=2A ;IB=0.4A 1.5 V VCB=325V; IE=0 100μAVEB=7V; IC=0 100μA
IC=1A ; VCE=4V 20
fT Transition frequency
IC=0.5A ; VCE=12V 10
2
元器件交易网www.cecb2b.com
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1114
Fig.2 Outline dimensions
3