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专利名称：3D NAND with oxide semiconductor channel发明人：Peter Rabkin,Johann Alsmeier,Masaaki
Higashitani
申请号：US145529申请日：20141125公开号：US09634097B2公开日：20170425
专利附图：
摘要：Disclosed herein are 3D NAND memory devices having an oxide semiconductorvertical NAND channel and methods for forming the same. The oxide semiconductor mayhave a crystalline structure. The channel of the vertically-oriented NAND string may be
cylindrically shaped. The crystalline structure has an axis that may be aligned crystallinewith respect to the cylindrical shape of the vertically-oriented channel substantiallythroughout the vertically-oriented channel. The crystalline structure may have a first axisthat is aligned parallel to the vertical channel, a second axis that is aligned perpendicularto a surface of the cylindrically shaped channel, etc.
申请人：SanDisk Technologies Inc.
地址：Plano TX US
国籍：US
代理机构：Vierra Magen Marcus LLP
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