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专利名称：Composite base including sintered base and
base surface flattening layer, and compositesubstrate including that composite base andsemiconductor crystalline layer
发明人：Yuki Seki,Issei Satoh,Koji Uematsu,Yoshiyuki
Yamamoto
申请号：US13107241申请日：20110513公开号：US09184228B2公开日：20151110
专利附图：
摘要：A composite base of the present invention includes a sintered base and a basesurface flattening layer disposed on the sintered base, and the base surface flatteninglayer has a surface RMS roughness of not more than 1.0 nm. A composite substrate ofthe present invention includes the composite base and a semiconductor crystal layerdisposed on a side of the composite base where the base surface flattening layer is
located, and a difference between a thermal expansion coefficient of the sintered baseand a thermal expansion coefficient of the semiconductor crystal layer is not more than4.5×10K. Thereby, a composite substrate in which a semiconductor crystal layer isattached to a sintered base, and a composite base suitably used for that compositesubstrate are provided.
申请人：Yuki Seki,Issei Satoh,Koji Uematsu,Yoshiyuki Yamamoto
地址：Itami JP,Itami JP,Itami JP,Itami JP
国籍：JP,JP,JP,JP
代理机构：Drinker Biddle & Reath LLP
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