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专利名称：DIFFUSION BARRIER AND METHOD
THEREFOR
发明人：BELL, Byron, Vencent,GUAN, Yimin申请号：EP03814963.9申请日：20031224公开号：EP1588412A1公开日：20051026
摘要：A semiconductor device containing at least one transistor and at least oneheater resistor in a heater resistor area adjacent the at least one transistor on asemiconductor substrate. The device includes a silicon substrate containing contactopenings for metal contacts to the at least one transistor. A barrier layer is in the contactopenings and in the heater resistor area and provides a diffusion barrier/heater resistorlayer. The barrier layer is selected from a group consisting of TaN, Ta/TaAl, TaN/TaAl,TiWN, TaAlN, TiN, Ta(N, O), WSi(N, O), TaSi, TaSiN, WSiN, and TaSi(N, O). A conductive layeris adjacent at least a portion of the barrier layer for providing connection between apower source and the at least one heater resistor and at least one transistor. Thesemiconductor device is devoid of a patterned and etched barrier layer in the heaterresistor area.
申请人：LEXMARK INTERNATIONAL, INC.
地址：740 West New Circle Road Lexington,Kentucky 40550 US
国籍：US
代理机构：Hughes, Andrea Michelle
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