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专利名称：Method for treating a semiconductor
surface to form a metal-containing layer
发明人：James K. Schaeffer,Darrell Roan,Dina H.
Triyoso,Olubunmi O. Adetutu
申请号：US10865268申请日：20040610公开号：US07132360B2公开日：20061107
专利附图：
摘要：A method for treating a semiconductor surface to form a metal-containing layerincludes providing a semiconductor substrate having an exposed surface. The exposed
surface of the semiconductor substrate is treated by forming one or more metalsoverlying the semiconductor substrate but not completely covering the exposed surfaceof the semiconductor substrate. The one or more metals enhance nucleation forsubsequent material growth. A metal-containing layer is formed on the exposed surfaceof the semiconductor substrate that has been treated. The treatment of the exposedsurface of the semiconductor substrate assists the metal-containing layer to coalesce. Inone embodiment, treatment of the exposed surface to enhance nucleation may beperformed by spin-coating, atomic layer deposition (ALD), physical layer deposition(PVD), electroplating, or electroless plating. The one or more metals used to treat theexposed surface may include any rare earth or transition metal, such as, for example,hafnium, lanthanum, etc.
申请人：James K. Schaeffer,Darrell Roan,Dina H. Triyoso,Olubunmi O. Adetutu
地址：Austin TX US,Austin TX US,Austin TX US,Austin TX US
国籍：US,US,US,US
代理人：Joanna G. Chiu,Robert L. King
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