SGP20N60
SGB20N60, SGW20N60
Fast S-IGBT in NPT-technology
• 75% lower Eoff compared to previous generation combined with
low conduction losses
• Short circuit withstand time – 10 µs• Designed for:
- Motor controls- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour- parallel switching capability
CGETypeSGP20N60SGB20N60SGW20N60Maximum RatingsParameter
VCE600V
IC20A
VCE(sat)2.4V
Tj150°C
PackageTO-220ABTO-263ABTO-247AC
Ordering CodeQ67041-A4712-A2Q67041-A4712-A4Q67040-S4236
SymbolVCEIC
Value6004020
UnitVA
Collector-emitter voltageDC collector currentTC = 25°CTC = 100°C
Pulsed collector current, tp limited by TjmaxTurn off safe operating areaVCE ≤ 600V, Tj ≤ 150°CGate-emitter voltage
Avalanche energy, single pulseIC = 20 A, VCC = 50 V, RGE = 25 Ω,start at Tj = 25°C
Short circuit withstand timePower dissipationTC = 25°C
Operating junction and storage temperature
1)
ICpuls-VGEEAS
8080±20115
VmJ
tSCPtotTj , Tstg
10179-55...+150
µsW°C
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Mar-00
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SGP20N60
SGB20N60, SGW20N60
Thermal ResistanceParameterCharacteristic
IGBT thermal resistance,junction – caseThermal resistance,junction – ambient
Electrical Characteristic, at Tj = 25 °C, unless otherwise specifiedParameter
Static Characteristic
Collector-emitter breakdown voltageCollector-emitter saturation voltage
V(BR)CESVGE=0V, IC=500µAVCE(sat)
VGE = 15V, IC=20ATj=25°CTj=150°C
Gate-emitter threshold voltageZero gate voltage collector current
VGE(th)ICES
IC=700µA,VCE=VGEVCE=600V,VGE=0VTj=25°CTj=150°C
Gate-emitter leakage currentTransconductanceDynamic CharacteristicInput capacitanceOutput capacitance
Reverse transfer capacitanceGate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
CissCossCrssQGateLE
VCE=25V,VGE=0V,f=1MHz
VCC=480V, IC=20AVGE=15VTO-247ACFehler!
Verweisquellekonnte nichtgefundenwerden.
IC(SC)
VGE=15V,tSC≤10µsVCC ≤ 600V,Tj ≤ 150°C
--713
-nH
----110010763100
132012876130
nCpF
IGESgfs
VCE=0V,VGE=20VVCE=20V, IC=20A
-------14
402500100-nAS
1.7-3
22.44
2.42.95
µA
600
--V
Symbol
Conditions
Value
min.
Typ.
max.
Unit
RthJA
TO-247AC
40
RthJC
0.7
K/W
Symbol
Conditions
Max. Value
Unit
Short circuit collector current
1)
-200-A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Mar-00
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SGP20N60
SGB20N60, SGW20N60
Switching Characteristic, Inductive Load, at Tj=25 °CParameter
IGBT CharacteristicTurn-on delay timeRise time
Turn-off delay timeFall timeTurn-on energyTurn-off energyTotal switching energy
td(on)trtd(off)tfEonEoffEts
Tj=25°C,
VCC=400V,IC=20A,VGE=0/15V,RG=16Ω,
Energy losses include“tail” and diodereverse recovery.
-------3630225540.440.330.77
4636270650.530.430.96
mJns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Switching Characteristic, Inductive Load, at Tj=150 °CParameter
IGBT CharacteristicTurn-on delay timeRise time
Turn-off delay timeFall timeTurn-on energyTurn-off energyTotal switching energy
td(on)trtd(off)tfEonEoffEts
Tj=150°CVCC=400V,IC=20A,VGE=0/15V,RG=16Ω
Energy losses include“tail” and diodereverse recovery.
-------3630250630.670.491.12
4636300760.810.1.45
mJns
Symbol
Conditions
Value
min.
typ.
max.
Unit
3Mar-00
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SGP20N60
SGB20N60, SGW20N60
110A100AIc90A
T80ATNNRE70ARERRU60AUCC RRO50ATC=80°COTTCCLE40ALELLOOC30ATCC=110°C ,CCI20AIc10A0A
10Hz
100Hz1kHz10kHz100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function ofswitching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 400V,VGE = 0/+15V, RG = 16Ω)
200W180W160W
NTO140W
NITA120WREPRISUCISD100W R ROTEW80WCOLELP60WOtCo t,C40WI20W0W25°C
50°C
75°C
100°C
125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a functionof case temperature(Tj ≤ 150°C)4100A
tp=4µs15µs10A
50µs200µs1A
1msDC0.1A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGEFigure 2. Safe operating area(D = 0, TC = 25°C, Tj ≤ 150°C)
50A
40A
30A
20A
10A
0A
25°C
50°C75°C100°C125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function ofcase temperature
(VGE ≤ 15V, Tj ≤ 150°C)
Mar-00
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SGP20N60
SGB20N60, SGW20N60
60A
50ATNVRE40AGE=20VRU15VC R13VOT30A11VC 9VLEL 7VOC20A 5VC10A0A0V
1V2V3V4V5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics(Tj = 25°C)70A60ATj=+25°C -55°CTN50A+150°CRERUC40A ROTC30ALELOC20AC10A0A0V
2V4V6V8V10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics(VCE = 10V)
60A
50A
TNVREGE=20VR40A
U15VC R13VOT30A
11VC 9VLEL 7VOC20A
5V ,CI10A
0A0V
1V2V3V4V5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics(Tj = 150°C)
GE4.0V
ATLOV 3.5V
NOIC = 40AITRAU3.0V
TAS RTE2.5V
TIIMC = 20AE-RO2.0V
TCLELOC1.5V
,)tas(EVC1.0V
-50°C0°C50°C100°C150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junctiontemperature(VGE = 15V)
5Mar-00
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SGP20N60
SGB20N60, SGW20N60
td(off)td(off)t, SWITCHING TIMES100ns
tft, SWITCHING TIMES100ns
tftd(on)trtd(on)tr10ns
10A20A30A40A
10ns
0Ω
10Ω20Ω30Ω40Ω50Ω60Ω
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as afunction of collector current
(inductive load, Tj = 150°C, VCE = 400V,VGE = 0/+15V, RG = 16Ω)RG, GATE RESISTOR
Figure 10. Typical switching times as afunction of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,VGE = 0/+15V, IC = 20A)
5.5V
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE5.0V4.5V4.0V3.5V3.0V2.5V2.0V
-50°C
0°C
50°C
100°C
150°Ctyp.max.td(off)t, SWITCHING TIMES100ns
tftrtd(on)min.10ns
0°C
50°C100°C150°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as afunction of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,IC = 20A, RG = 16Ω)
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltageas a function of junction temperature(IC = 0.7mA)
6Mar-00
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SGP20N60
SGB20N60, SGW20N60
3.0mJ
*) Eon and Ets include lossesEdue to diode recovery.ts*2.5mJESSOSL2.0mJ
GYREon*NE1.5mJ
EGNIHCT1.0mJ
EoffIWS ,E0.5mJ
0.0mJ
0A
10A20A30A40A50A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy lossesas a function of collector current
(inductive load, Tj = 150°C, VCE = 400V,VGE = 0/+15V, RG = 16Ω)1.6mJ
1.4mJ
*) Eon and Ets include lossesdue to diode recovery.ESS1.2mJEOSts*L 1.0mJGYRNEE0.8mJ GNEIH0.6mJon*CTIWES0.4mJoff ,E0.2mJ0.0mJ
0°C
50°C100°C150°C
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy lossesas a function of junction temperature(inductive load, VCE = 400V, VGE = 0/+15V,IC = 20A, RG = 16Ω)
3.0mJ
*) Eon and Ets include lossesdue to diode recovery.2.5mJ
ESSOSL2.0mJ
GYREts*NE1.5mJ
EGNIHCT1.0mJ
EIon*WS ,EEoff0.5mJ
0.0mJ
0Ω
10Ω20Ω30Ω40Ω50Ω60Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy lossesas a function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,VGE = 0/+15V, IC = 20A)
0
CE10K/WND=0.5DA0.2PEIM10-1
K/W0.1 L0.05RMA0.02HER,(1/W)τ, (s)=T T10-2
K/W0.18820.1137NE0.010.32142.24*10-2I0.15127.86*10-4NS0.03929.41*10-5RAT10-3
K/WR 1R2,CJhsingle pulsetZC1=τ1/R1C2=τ2/R210-4
K/W1µs
10µs100µs1ms10ms100ms1s
tp, PULSE WIDTH
Figure 16. IGBT transient thermal
impedance as a function of pulse width(D = tp / T)
7Mar-00
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SGP20N60
SGB20N60, SGW20N60
25V
20V
GETALOV 15V
RE120V480VTTIEM-E10VTAG ,EGV5V
0V0nC
25nC50nC75nC100nC125nC
QGE, GATE CHARGE
Figure 17. Typical gate charge(IC = 20A)
25µs
ME20µs
IT DNTAHS15µs
TIW TIUCR10µs
IC TROHS5µs
,cst0µ10V
s11V12V13V14V15V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as afunction of gate-emitter voltage(VCE = 600V, start at Tj = 25°C)Ciss1nF
CENATICAPCCA100pF
oss ,CCrss10pF
0V
10V20V30V
VCE, COLLECTOR-EMITTER VOLTAGEFigure 18. Typical capacitance as afunction of collector-emitter voltage(VGE = 0V, f = 1MHz)
350A
TNRE300ARUC R250AOTCLE200ALOC TIU150ACRIC T100AROHS ,50A)cs(CI0A10V
12V14V16V18V20V
VGE, GATE-EMITTER VOLTAGE
Figure 20. Typical short circuit collectorcurrent as a function of gate-emitter voltage(VCE ≤ 600V, Tj = 150°C)
8Mar-00
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SGP20N60
SGB20N60, SGW20N60
TO-220ABTO-263AB (D2Pak)9dimensions
symbol
[mm]
[inch]
min
maxminmaxA9.7010.300.38190.4055B14.8815.950.58580.6280C0.650.860.02560.0339D3.553.0.13980.1531E2.603.000.10240.1181F6.006.800.23620.2677G13.0014.000.51180.5512H4.354.750.17130.1870K0.380.650.01500.0256L0.95
1.32
0.0374
0.0520
M2.54 typ.0.1 typ.N4.304.500.16930.1772P1.171.400.04610.0551T
2.30
2.72
0.0906
0.1071
dimensions
symbol
[mm]
[inch]
min
maxminmaxA9.8010.200.38580.4016B0.701.300.02760.0512C1.001.600.03940.0630D1.031.070.04060.0421E2.54 typ.0.1 typ.F0.650.850.02560.0335G5.08 typ.
0.2 typ.
H4.304.500.16930.1772K1.171.370.04610.0539L9.059.450.35630.3720M2.302.500.09060.0984N15 typ.0.5906 typ.
P0.000.200.00000.0079Q4.205.200.16540.2047R8° max8° max
S2.403.000.09450.1181T0.40
0.60
0.0157
0.0236
U10.800.4252V1.150.0453W6.230.2453X4.600.1811Y9.400.3701Z
16.150.6358
Mar-00
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SGP20N60
SGB20N60, SGW20N60
TO-247AC10dimensions
symbol
[mm]
[inch]
min
maxminmaxA4.785.280.18820.2079B2.292.510.09020.0988C1.782.290.07010.0902D1.091.320.04290.0520E1.732.060.06810.0811F2.673.180.10510.1252G0.76 max0.0299 max
H20.8021.160.810.8331K15.6516.150.61610.6358L5.215.720.20510.2252M19.8120.680.77990.8142N3.560
4.9300.14020.1941∅P3.610.1421
Q
6.126.22
0.2409
0.2449
Mar-00
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SGP20N60
SGB20N60, SGW20N60
τ1Tj(t)p(t)r1r2τ2τnrnrFigure A. Definition of switching times
Figure B. Definition of switching losses
11r12rnTCFigure D. Thermal equivalentcircuit
Mar-00
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SGP20N60
SGB20N60, SGW20N60
Published by
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.Information
For further information on technology, delivery terms and conditions and prices please contact your nearest InfineonTechnologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in questionplease contact your nearest Infineon Technologies Office.
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approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure ofthat life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices orsystems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protecthuman life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
12Mar-00
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