专利内容由知识产权出版社提供
专利名称：Single plate capacitor having an electrode
structure of high adhesion
发明人：Yohichi Aono申请号：US07/2027申请日：19880614公开号：US04903110A公开日：19900220
摘要：A single plate capacitor includes a dielectric substrate having high dielectricconstant, a first SiO.sub.2 film formed ona lower main surface of the dielectric substrate, afirst TiW film formed on the first SiO.sub. 2 film, a solder diffusion barrier film of Pt, Pd orNi formed on the first TiW film, a first Au film formed on the solder diffusion barrier film,a second SiO.sub.2 film formed on an upper main surface of the dielectric substrate, asecond TiW formed on the second SiO.sub.2 film and a second Au film formed on thesecond SiO.sub.2 film.
申请人：NEC CORPORATION
代理机构：Helfgott & Karas
更多信息请下载全文后查看