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专利名称：SRAM with multiple power domains发明人：Christophe J. Chevallier,Scott Hanson申请号：US15345229申请日：20161107公开号：US10062431B2公开日：20180828
专利附图：
摘要：An SRAM facility adapted to power an address path using a first developedsupply voltage and to power a data path using a second developed supply voltage, thefirst and second developed power supplies being separate, distinct, and different. TheSRAM facility includes a power supply facility or a voltage supply facility adapted to
develop the first and second supply voltages.
申请人：Ambiq Micro, Inc.
地址：Austin TX US
国籍：US
代理机构：Hunt Pennington Kumar & Dula, PLLC
代理人：Artie Pennington,Jeffrey Van Myers
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