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专利名称：Negative Capacitance Field Effect Transistor
With Charged Dielectric Material
发明人：Der-Chuan Lai,Samuel C. Pan,Yu-Cheng
Shen,Min-Hung Lee,Chee-Wee Liu
申请号：US14942005申请日：20151116
公开号：US20170141235A1公开日：20170518
专利附图：
摘要：The present disclosure provides a semiconductor device in accordance withsome embodiments. The semiconductor device includes a substrate; a gate stack over
the substrate. The gate stack includes a ferroelectric layer; a first dielectric materiallayer; and a first conductive layer. One of the first dielectric material layer and theferroelectric layer is electrically charged to form a charged layer with fixed charge. Thesemiconductor device further includes source and drain features formed on the substrateand disposed on sides of the gate stack.
申请人：Taiwan Semiconductor Manufacturing Company, Ltd.,National TaiwanUniversity
地址：Hsin-Chu TW,Taipei City TW
国籍：TW,TW
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