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tda2030-14瓦高保真音频放大器

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TDA2030

14WHi-FiAUDIOAMPLIFIER

DESCRIPTION

TheTDA2030isamonolithicintegratedcircuitinPentawatt®package,intendedforuseasalowfrequencyclassABamplifier.Typicallyitprovides14Woutputpower(d=0.5%)at14V/4Ω;at±14Vor28V,theguaranteedoutputpoweris12Wona4Ωloadand8Wona8Ω(DIN45500).

TheTDA2030provideshighoutputcurrentandhasverylowharmonicandcross-overdistortion.

Furtherthedeviceincorporatesanoriginal(andpatented)shortcircuitprotectionsystemcompris-inganarrangementforautomaticallylimitingthedissipatedpowersoastokeeptheworkingpointoftheoutputtransistorswithintheirsafeoperatingarea.Aconventionalthermalshut-downsystemisalsoincluded.

ABSOLUTEMAXIMUMRATINGS

SymbolVsViViIoPtotTstg,Tj

SupplyvoltageInputvoltage

Differentialinputvoltage

Outputpeakcurrent(internallylimited)PowerdissipationatTcase=90°CStoprageandjunctiontemperature

Parameter

Pentawatt

ORDERINGNUMBERS:TDA2030H

TDA2030V

Value±18(36)Vs±153.520-40to150

UnitVVAW°C

TYPICALAPPLICATION

June1998

1/12

TDA2030

PINCONNECTION(topview)

+VS

OUTPUT-VS

INVERTINGINPUT

NONINVERTINGINPUT

TESTCIRCUIT

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TDA2030

THERMALDATA

SymbolRthj-case

Parameter

Thermalresistancejunction-case

max

Value3

Unit°C/W

ELECTRICALCHARACTERISTICS(Refertothetestcircuit,Vs=±14V,Tamb=25°Cunlessotherwisespecified)forsingleSupplyrefertofig.15Vs=28V

SymbolVsIdIbVosIosPo

Parameter

SupplyvoltageQuiescentdraincurrentInputbiascurrentInputoffsetvoltageInputoffsetcurrentOutputpower

d=0.5%Gv=30dBf=40to15,000HzRL=4ΩRL=8Ωd=10%f=1KHzRL=4ΩRL=8Ω

d

Distortion

Gv=30dB

1811

WW

Vs=±18V(Vs=36V)

Testconditions

Min.±612

400.2±2±20Typ.

Max.±1836602±20±200

UnitVmAµAmVnA

128149WW

Po=0.1to12WRL=4ΩGv=30dBf=40to15,000HzPo=0.1to8WRL=8ΩGv=30dBf=40to15,000Hz

0.20.5%

0.110to140,0000.5

590

0.5%HzMΩdB

BRiGvGveNiNSVR

PowerBandwidth(-3dB)

Inputresistance(pin1)Voltagegain(openloop)Voltagegain(closedloop)InputnoisevoltageInputnoisecurrentSupplyvoltagerejection

Gv=30dBPo=12W

RL=4Ω

f=1kHz

B=22Hzto22KHz

29.530380

30.510200

dBµVpAdB

RL=4ΩGv=30dBRg=22kΩVripple=0.5Vefffripple=100HzPo=14WPo=W

RL=4ΩRL=8Ω

4050

IdDraincurrent

900500mAmA

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TDA2030

Figure1.Outputpowervs.supplyvoltage

Figure2.Outputpowervs.supplyvoltage

Figure3.Distortionvs.outputpower

Figure4.Distortionvs.outputpowerFigure5.Distortionvs.outputpowerFigure6.Distortionvs.frequency

Figure7.Distortionvs.frequency

Figure8.Frequencyre-sponsewithdifferentvaluesoftherolloffcapacitorC8(seefig.13)

Figure9.Quiescentcurrentvs.supplyvoltage

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TDA2030

Figure10.Supplyvoltagerejectionvs.voltagegain

Figure11.Powerdissipa-tionandefficiencyvs.outputpower

Figure12.Maximumpowerdissipationvs.supplyvolt-age(sinewaveoperation)

APPLICATIONINFORMATIONFigure13.Typicalamplifierwithsplitpowersupply

Figure14.P.C.boardandcomponentlayoutforthecircuitoffig.13(1:1scale)

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TDA2030

APPLICATIONINFORMATION(continued)

Figure15.TypicalamplifierwithsinglepowersupplyFigure16.P.C.boardandcomponentlayoutforthecircuitoffig.15(1:1scale)

Figure17.Bridgeamplifierconfigurationwithsplitpowersupply(Po=28W,Vs=±14V)

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TDA2030

PRACTICALCONSIDERATIONS

Printedcircuitboard

ThelayoutshowninFig.16shouldbeadoptedbythedesigners.Ifdifferentlayoutsareused,thegroundpointsofinput1andinput2mustbewelldecoupledfromthegroundreturnoftheoutputinwhichahighcurrentflows.

Assemblysuggestion

Noelectricalisolationisneededbetweenthe

packageandtheheatsinkwithsinglesupplyvoltageconfiguration.

Applicationsuggestions

Therecommendedvaluesofthecomponentsarethoseshownonapplicationcircuitoffig.13.

Differentvaluescanbeused.Thefollowingtablecanhelpthedesigner.

Component

R1R2R3R4

Recomm.value22kΩ680Ω22kΩ1Ω

Purpose

Closedloopgainsetting

Closedloopgainsetting

Noninvertinginputbiasing

Frequencystability

Largerthan

recommendedvalueIncreaseofgainDecreaseofgain(*)Increaseofinputimpedance

Dangerofosccilat.athighfrequencieswithinduct.loadsPoorhighfrequenciesattenuation

SmallerthanrecommendedvalueDecreaseofgain(*)IncreaseofgainDecreaseofinputimpedance

R5C1C2C3,C4C5,C6C7C8D1,D2

≅3R21µF22µF0.1µF100µF0.22µF12πBR11N4001

UpperfrequencycutoffInputDCdecouplingInvertingDCdecouplingSupplyvoltagebypassSupplyvoltagebypass

FrequencystabilityUpperfrequencycutoff

DangerofoscillationIncreaseoflowfrequenciescutoffIncreaseoflowfrequenciescutoffDangerofoscillationDangerofoscillation

Dangerofoscillation

SmallerbandwidthLargerbandwidth

Toprotectthedeviceagainstoutputvoltagespikes

(*)Closedloopgainmustbehigherthan24dB

7/12

TDA2030

SINGLESUPPLYAPPLICATION

Component

R1R2R3R4

Recomm.value150kΩ4.7kΩ100kΩ1Ω

Purpose

Closedloopgainsetting

Closedloopgainsetting

Noninvertinginputbiasing

Frequencystability

Largerthan

recommendedvalueIncreaseofgainDecreaseofgain(*)Increaseofinputimpedance

Dangerofosccilat.athighfrequencieswithinduct.loads

PowerConsumptionIncreaseoflowfrequenciescutoffIncreaseoflowfrequenciescutoffDangerofoscillationDangerofoscillation

Dangerofoscillation

Smallerbandwidth

LargerbandwidthSmallerthanrecommendedvalueDecreaseofgain(*)IncreaseofgainDecreaseofinputimpedance

RA/RBC1C2C3C5C7C8D1,D2

100kΩ1µF22µF0.1µF100µF0.22µF12πBR11N4001

NoninvertinginputBiasingInputDCdecouplingInvertingDCdecouplingSupplyvoltagebypassSupplyvoltagebypass

FrequencystabilityUpperfrequencycutoff

Toprotectthedeviceagainstoutputvoltagespikes

(*)Closedloopgainmustbehigherthan24dB

8/12

TDA2030

SHORTCIRCUITPROTECTION

TheTDA2030hasanoriginalcircuitwhichlimitsthecurrentoftheoutputtransistors.Fig.18showsthatthemaximumoutputcurrentisafunctionofthecollectoremittervoltage;hencetheoutputtransis-torsworkwithintheirsafeoperatingarea(Fig.2).Thisfunctioncanthereforebeconsideredasbeing

peakpowerlimitingratherthansimplecurrentlim-iting.

Itreducesthepossibilitythatthedevicegetsdam-agedduringanaccidentalshortcircuitfromACoutputtoground.

Figure18.Maximumoutputcurrentvs.voltage[VCEsat]acrosseachoutputtransistor

Figure19.Safeoperatingareaandcollectorcharacteristicsoftheprotectedpowertransistor

THERMALSHUT-DOWN

Thepresenceofathermallimitingcircuitoffersthefollowingadvantages:

1.Anoverloadontheoutput(evenifitisperma-nent),oranabovelimitambienttemperaturecanbeeasilysupportedsincetheTjcannotbehigherthan150°C.2.Theheatsinkcanhaveasmallerfactorofsafetycomparedwiththatofaconventionalcircuit.Thereisnopossibilityofdevicedamageduetohighjunctiontemperature.Ifforanyreason,the

junctiontemperatureincreasesupto150°C,thethermalshut-downsimplyreducesthepowerdissipationatthecurrentconsumption.Themaximumallowablepowerdissipationde-pendsuponthesizeoftheexternalheatsink(i.e.itsthermalresistance);fig.22showsthisdissipablepowerasafunctionofambienttemperaturefordifferentthermalresistance.

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TDA2030

Figure20.Outputpoweranddraincurrentvs.casetemperature(RL=4Ω)

Figure21.Outputpoweranddraincurrentvs.casetemperature(RL=8Ω)

Figure22.Maximumallowablepowerdissipationvs.ambienttemperature

Figure23.Exampleofheat-sink

Dimension:suggestion.

Thefollowingtableshowsthelengththattheheatsinkinfig.23musthaveforseveralvaluesofPtotandRth.

Ptot(W)

Lengthofheatsink

1260

840

630

(mm)

Rthofheatsink

(°C/W)

4.26.28.3

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TDA2030

PENTAWATTPACKAGEMECHANICALDATA

DIM.ACDD1EE1FF1GG1H2H3LL1L2L3L4L5L6L7L9MM1V4Dia

mm

MIN.

TYP.

MAX.4.81.372.81.350.551.191.051.43.6710.410.418.1515.9521.622.71.29315.86..754.25

40°(typ.)

3.65

3.85

0.144

0.152

MIN.

inchTYP.

MAX.0.10.0540.1100.0530.0220.0470.0410.0550.1420.2760.4090.4090.7150.6280.8500.40.0510.1180.6220.2600.1870.167

2.41.20.350.760.813.26.610.0517.5515.5521.222.32.615.1.233.75

3.46.8

0.0940.0470.0140.0300.0310.0390.1260.2600.3960.6910.6120.8310.8780.1020.5940.2360.1670.148

0.1340.268

17.8515.7521.422.50.7030.6200.8430.886

0.24.540.0080.1770.157

LL1L8

V

V1

VR

A

B

C

D1

L5

L2L3

D

RV4

H2

FE

V4

V3

E

R

M1

VV

M

E1

H3H1

Dia.L7

L6

RESINBETWEEN

LEADS

F1

FH2

GG1

V4

L9

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TDA2030

Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesofuseofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.NolicenseisgrantedbyimplicationorotherwiseunderanypatentorpatentrightsofSTMicroelectronics.Specificationmentionedinthispublicationaresubjecttochangewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied.STMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswrittenapprovalofSTMicroelectronics.

TheSTlogoisaregisteredtrademarkofSTMicroelectronics©1998STMicroelectronics–PrintedinItaly–AllRightsReserved

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