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专利名称：Voltage regulation system for a multiword
programming of a low integration area nonvolatile memory
发明人：Ignazio Martines,Massimo Scardaci申请号：US107351申请日：20040226公开号：US07139197B2公开日：20061121
专利附图：
摘要：The invention relates to a voltage regulation system for multiword
programming in non volatile memories, for example of the Flash type, with low circuit
area occupation, wherein memories comprise at least a memory cell matrix organized incell rows and columns and with corresponding circuits responsible for addressing,decoding, reading, writing and erasing the memory cell content. The memory cells havedrain terminals connected to matrix columns and are biased in the programming stepwith a predetermined voltage value by means of program load circuits associated to eachmatrix column. In parallel with each program load circuit, a conduction-to-ground path isenabled by a controlled active element.
申请人：Ignazio Martines,Massimo Scardaci
地址：Aci Castello IT,Gallipoli IT
国籍：IT,IT
代理机构：Jenkens & Gilchrist, P.C.
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