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专利名称：Method for Manufacturing Interconnect
Structures Incorporating Air-Gap Spacers
发明人：Satya V. Nitta,Shom Ponoth申请号：US13096757申请日：20110428
公开号：US20110237075A1公开日：20110929
专利附图：
摘要：A dual damascene article of manufacture comprises a trench containing aconductive metal column where the trench and the conductive metal column extenddown into and are contiguous with a via. The trench and the conductive metal column and
the via have a common axis. These articles comprise interconnect structures incorporatingair-gap spacers containing metal/insulator structures for Very Large Scale Integrated(VLSI) and Ultra Large Scale Integrated (ULSI) devices and packaging. The trench in thisregard comprises a sidewall air-gap immediately adjacent the side walls of the trench andthe conductive metal column, the sidewall air-gap extending down to the via to a depthbelow a line fixed by the bottom of the trench, and continues downward in the via for adistance of from about 1 Angstrom below the line to the full depth of the via. In anotheraspect, the article of manufacture comprises a capped dual damascene structure.
申请人：Satya V. Nitta,Shom Ponoth
地址：Armonk NY US,Armonk NY US
国籍：US,US
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