专利内容由知识产权出版社提供
专利名称：CMOS DEVICES HAVING CHANNEL REGIONS
WITH A V-SHAPED TRENCH AND HYBRIDCHANNEL ORIENTATIONS, AND METHODFOR FORMING THE SAME
发明人：Huilong Zhu申请号：US11624387申请日：20070118
公开号：US20080173901A1公开日：20080724
专利附图：
摘要：The present invention relates to a field effect transistor (FET) containing a
channel extending perpendicularly across at least one V-shaped trench and along theinterior surfaces thereof. In one aspect, a semiconductor device is provided that includesa semiconductor substrate having first and second device regions that are isolated fromeach other by an isolation region. The first device region has a planar surface with a firstcrystalline orientation, and the second device region has at least one V-shaped trenchwhich has interior surfaces with a second, different crystalline orientation. A first FET islocated at the first device region and contains a channel extending along the planarsurface of the first device region. A second, complementary FET is located at the seconddevice region and contains a channel extending perpendicularly across the at least one V-shaped trench and along the interior surfaces thereof.
申请人：Huilong Zhu
地址：Poughkeepsie NY US
国籍：US
更多信息请下载全文后查看