METHOD OF MAKING A SEMICONDUCTOR SWITCH DEVICE

专利名称：METHOD OF MAKING A SEMICONDUCTOR

SWITCH DEVICE

发明人：Mahmoud Shehab Mohammad Al-Sa'di,Petrus Hubertus Cornelis

Magnee,Johannes Josephus TheodorusMarinus Donkers

申请号：US15886265申请日：20180201

公开号：US201802106A1公开日：20180802

专利附图：

摘要：A method of making a semiconductor switch device. The method includesproviding a semiconductor substrate having a major surface and a first semiconductorregion having a first conductivity type located adjacent the major surface. The methodalso includes depositing a gate dielectric on the major surface. The method furtherincludes implanting ions into the first semiconductor region through a mask positionedover the first semiconductor region, thereby to form a well region located in the firstsemiconductor region. The well region has a second conductivity type different to thefirst conductivity type. The method also includes depositing and patterning a gateelectrode material on the gate dielectric to form a gate electrode located directly abovethe well region. The method further includes implanting ions into the first semiconductorregion to form a source region and a drain region of the semiconductor switch device oneither side of the gate electrode.

申请人：NXP B.V.

地址：Eindhoven NL

国籍：NL

更多信息请下载全文后查看