6N137
TOSHIBA Photocoupler GaAℓAs Ired & Photo IC
6N137
Unit in mm
Degital Logic Isolation Tele-Communication
Analog Data Equipment Control
The TOSHIBA 6N137 consist of a high emitting diode and a one chip photo IC. This unit is 8-lead DIP package.
• LSTTL / TTL compatible: 5V Supply • Ultra high speed: 10MBd
• Guaranteed performance over temperature: 0°C to 70°C • High isolation voltage: 2500Vrms min. • UL recognized: UL1577, file no. E67349
Truth Table
Input Enable Output H H L L H H H L H L L H
TOSHIBA 11−10C4 Weight: 0.54g
Pin Configurations (top view)
IF VF
2 3 7IE VE
5GND
ICC IO 86VCCVO
12
34
8 765
1 : N.C. 2 : Anode 3 : Cathode 4 : N.C. 5 : GND
6 : Output(Open collector) 7 : Enable 8 : VCC
12007-10-01
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6N137 Absolute Maximum Ratings
Characteristic Symbol Rating Unit Forward current LED Pulse forward current Reverse voltage Output current Detector Output voltage
Supply voltage (1 minute maximum) Enable input voltage
(not to exceed VCC by more than 500mV) Output collector power dissipation Operating temperature range Storage temperature range Lead solder temperature (10 s)
(Note 2)(Note 1)
IF 20 mA IFP 40 mA VR 5 V IO 50 mA VO 7 V VCC 7 V VEH 5.5 V PO 85 mW Topr 0~70 °C Tstg
−55~125 °C Tsol 260 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) 50% duty cycle, 1ms pulse width.
(Note 2) Soldering portion of lead: Up to 2mm from the body of the device.
Recommended Operating Conditions
Characteristic SymbolInput current, low level each channel Input current, high level each channel High level enable voltage
Low level enable voltage (output high) Supply voltage, output* Fan out (TTL load) Operating temperature
Min. Max.Unit IFL 0 250 μA IFH 7 20 mA VEH 2.0 VCC V VEL 0 0.8 V VCC 4.5 5.5 V N Ta
― 8 ― 0
70
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.
*This item denotes operating ranges, not meaning of recommended operating conditions.
Precaution
Please be careful of the followings.
A ceramic capacitor(0.1μF)should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed 1cm.
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6N137 Electrical Characteristics
Over Recommended Temperature (Ta = 0~70°C unless otherwise noted)
Characteristic Symbol Test Condition Min. (**)Typ. Max. Unit
High level output current
IOH VOL IEH IEL ICCH ICCL
(Note 3)
RI−O
VCC=5.5V, VO=5.5V
IF=250μA, VE = 2.0V VCC=5.5V, IF=5mA VEH=2.0V
IOL(sinking)=13mA VCC=5.5V, VE=2.0V VCC=5.5V, VE=0.5V VCC=5.5V, IF=0, VE=0.5V VCC=5.5V, IF=10mA VE=0.5V
VI−O=500V, Ta=25°C R.H.≤60%
― 1 250 μA
Low level output voltage High level enable current Low level enable current High level supply current Low level supply current Resistance (input−output)
― 0.4 0.6 V ― ―
−1.0 −1.6
― mA−2.0 mA― 7 15 mA― 12 18 mA― 10
12
― Ω
Capacitance (input−output)
(Note 3) Input forward voltage Input reverse breakdown voltage
Input capacitance Current transfer ratio
Ta25°C CI−O f1MHz, VF BVR CIN
IF=10mA, Ta=25°C IR=10μA, Ta=25°C VF=0, f=1MHz
― 0.6 ― pF ― 1.65 1.75 V 5
―
― V ― 45 ― pF ― 1000 ― % CTR =IF=5.0mA, R=L=100Ω
(**) All typical values are at VCC=5V, Ta=25°C
(Note 3) Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together.
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6N137 Switching Characteristics (Ta = 25°C, VCC = 5V)
Test
Characteristic Symbol Circuit
Propagation delay time to high output level
Propagation delay time to low output level Output rise−fall time (10−90%)
Propagation delay time of enable from VEH to VEL
Test Condition
Min.
Typ.
Max.
Unit
RL=350Ω, CL=15pF
tpLH 1 IF=7.5mA RL=350Ω, CL=15pF
tpHL 1 IF=7.5mA tr, tf
―
RL=350Ω, CL=15pF IF=7.5mA
― 60 75 ns ― ―
60 75 ns 30
― ns
RL=350Ω, CL=15pF
IF=7.5mA
tELH 2 VEH=3.0V VEL=0.5V RL=350Ω, CL=15pF IF=7.5mA
tEHL 2 VEH=3.0V VEL=0.5V VCM=10V RL=350Ω
CMH 3 VO(min.)=2V IF=0mA VCM=10V RL=350Ω
CML 3 VO(max.)=0.8V IF=5mA
― 25 ― ns
Propagation delay time of enable from VEL to VEH Common mode transient immunity at logic high output level
Common mode transient Immunity at logic low output level
― 25 ― ns
― 200 ― V / μs
― −500 ― V / μs
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6N137
Test Circuit 1.
5VtpHL and tpLH Input
tpHL tpLH Output VO 1.5V VOHVOL
350mV(IF= 7.5mA)175mV(IF= 3.75mA)Pulse generator ZO = 50Ω tr = 5ns IF47Ω 1234VCC 8 76GND 50.1μF By- pass CL RL Output VO
monitor- ing node Monitoring Node
･ CL is approximately 15pF which includes probe and stray wiring capacitance.
Test Circuit 2.
tEHL and tELH
Pulse generator ZO = 50Ω tr = 5ns 3.0V Input VE
tEHL tELH Output VO 1.5V VOHVOL
1.5V 7.5mAdc IF Input VE Monitoring node 5V1234GND VCC 8 0.1μF 765By- pass CL RL VOOutput monitor- ing node ･ CL is approximately 15pF which includes prove and stray wiring capacitance.
Test Circuit 3.
Transient immunity and typical waveforms
10% tr VO
Switch at A : IF = 0mA
VO
Switching at B : IF = 5mA
VOL
190% 10% 90% tf 5V
VFF
10V 0V
B4Pulse gen. ZO = 50Ω. VCM GND 5IFA23VCC 8 760.1μF By- pass 5VRL VO
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6N137
IF – VF
100
ΔVF / ΔTa – IF
-2.6
Forward voltage temperature coefficient ΔVF /Δta (mV / °C ) Ta = 25°C Forward current IF (mA) -2.4
10 -2.2
1 -2.0
-1.8
0.1 -1.6
0.01 1.0
1.2 1.4 1.6 1.8
-1.4
0.1
0.3 1 3 10 30
Forward voltage VF (V)
Forward current IF (mA)
VO – IF
8 VCC = 5V IOH - Ta
10VF = 1V 53VCC = 5.5V VO = 5.5V Output voltage VO (V) Ta = 25°C 6 High level output current IOH (μA) 3 6
4 RL = 350Ω 1kΩ 4kΩ 10.50.32 0 0
0.11
2
4
5
0
20
40
60
80
Forward current IF (mA)
Ambient temperature Ta (°C)
VO – IF
8 VCC = 5V RL = 350Ω RL = 4kΩ 0.5
VO L – Ta
IF = 5mA VCC = 5.5V VE = 2V Output voltage VO (V) 6 Low level output voltage VOL (V) IOL = 16mA 0.412.8mA 9.6mA Ta = 70°C 4 0°C 0.36.4mA 2 0 0
0.21
2
3
4
5
6 0
20
40
60
80
Forward current IF (mA) Ambient temperature Ta (°C)
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6N137
tpHL, tpLH - IF
120 tpLH 100 RL = 4kΩ100120tpLH RL = 4kΩ 350Ω 1kΩ80tpLH 350Ω 60tpHL 401kΩ 4kΩ
tpHL, tpLH - Ta
Propagation delay time tpHL, tpLH (ns) 80 tpLH 1kΩ350Ω60 tpHL tpLH 350Ω1kΩ4kΩTa = 25°C VCC = 5V 40 Propagation delay time tpHL, tpLH (ns) 20 20VCC = 5V IF = 7.5mA 0 5
07
9
11
13
15
17
19
0
10 20 30 40 50
60
70
Forward current IF (mA)
Ambient temperature Ta (°C)
tr, tf – Ta
320 300 VCC = 5V IF = 7.5mA tf 280 80 60 tf tr 20 0 0
1kΩ4kΩ10 20 30 40 50 60 70
350Ωtf 1kΩ RL = 4kΩ80VCC = 5V VEH = 3V IF = 7.5mA tELHRL = 4kΩ
tEHL,tELH - Ta
Rise, fall time tr, tf (ns) 70 Enable propagation delay time tEHL, tELH (ns) 605040tELH30tELH1kΩ 350Ω 350Ω tEHL1000
40 350Ω201kΩ 4kΩ Ambient temperature Ta (°C)
10 20 70 30 50 40 60
Ambient temperature Ta (°C)
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6N137
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
82007-10-01
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