HVCATM
BR10F10kV 0.4A HIGH VOLTAGE DIODES
Outline Drawings : mm
BR10F is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayedmesa type silicon chip by epoxy resin.
Lot No.Cathode Marko 5.0o 1.28 Features High speed switchingHigh Current
High surge resisitivity for CRT dischargeHigh reliability design High Voltage
27 min.9.027 min. Applications X light Power supplyLaser
Voltage doubler circuitMicrowave emission power
Cathode Mark
Type
Mark
BR10FBR10F
Maximum Ratings and Characteristics Absolute Maximum Ratings Items
Repetitive Peak Renerse VoltageAverage Output CurrentSuege CurrentJunction Temperature
Allowable Operation Case Temperature
Symbols VRRM IO IFSM
Condition BR10F
Units kV Apeak Apeak °C °C °C
10
Ta=25°C,Resistive Load
0.4
20
155125-40 to +155
Tj Tc
Storage Temperature Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items
Maximum Forward Voltage DropMaximum Reverse Current
Symbols VF IR1 IR2
Conditionsat 25°C,IF =IF(AV)BR10F255.050
150--
Units VuAuAnSpF
at 25°C,VR =VRRM at 100°C,VR =VRRMMaximum Reverse Recovery Time Trr at 25°CJunction Capacitance Cj at 25°C,VR=0V,f=1MHz GETE ELECTRONICS CO.,LTD
Http://www.getedz.com E-mail:sales@getedz.com2012